Effect of Field Dielectric Material on Performance of InGaAs Power LDMOSFET
نویسندگان
چکیده
In this paper, a power laterally-diffused metal-oxidesemiconductor field-effect transistor (LDMOSFET) on In0.53Ga0.47As is presented. The device utilizes a thicker field-oxide with low dielectric constant under the field-plate in order to achieve possible reduction in device capacitances and reduced-surface-field effect. Using 2D numerical simulations, performance of the proposed device is analyzed and compared with that of the conventional LDMOSFET. The proposed structure provides 50% increase in the breakdown voltage, 21% increase in transit frequency, and 72% improvement in figure-of-merit over the conventional device for same cell pitch. Keywords—InGaAs, dielectric, lateral, power MOSFET.
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